Vertical-cavity surface-emitting laser array with multiple metal layers for addressing different groups of emitters

ABSTRACT

An optical device may include an array of vertical-cavity surface-emitting lasers (VCSELs) having a design wavelength, each VCSEL having an emission area. The optical device may include a first metal layer, substantially covering the array, a second metal layer substantially covering the first metal layer, and an electrical isolation layer, between the first metal layer and the second metal layer, that includes vias for electrically connecting portions of the first metal layer and portions of the second metal layer. The optical device may include a dielectric disposed over the emission area of each VCSEL. A variation in a thickness of the dielectric across at least approximately 90% of an area of the dielectric may be less than approximately 2% of the design wavelength. A depth of a well around the emission area may be equal to at least approximately 10% of a width of the emission area.

RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to U.S.Provisional Patent Application No. 62/571,113, filed on Oct. 11, 2017,the content of which is incorporated by reference herein in itsentirety.

TECHNICAL FIELD

The present disclosure relates generally to a vertical-cavitysurface-emitting laser (VCSEL) array and, more particularly, to a VCSELarray including multiple metal layers for addressing different groups ofemitters.

BACKGROUND

Determining a depth in a real-world image can be used in a variety ofapplications, such as augmented reality, gesture recognition (e.g., fora gaming system), facial recognition (e.g., for a consumer device),scene analysis (e.g., for an automated driving system), and/or the like.Stereo vision is one technique for determining depth in a real-worldimage. Stereo vision relies on accurately correlating points observedfrom a pair of cameras (e.g., a left camera and a right camera).However, the stereo vision technique is not effective when there are notdistinct features over large regions of the image that can be matched.

More recently, sensors for depth determination based upon semiconductorlasers have been developed. One technique that uses such a sensor is atime-of-flight technique. The time-of-flight technique relies onaccurate sensing of a delay between a transmitted light pulse and areceived light pulse to measure distance. Typically, the delay isdetected based on a time difference between the time of the transmittedlight pulse and the time of the received light pulse (i.e., a time-delaybetween the transmitted and received light pulses), and a distance to anobject can be determined based on the delay (e.g., since the speed oflight is known). An image can be generated based on determiningdistances to various locations in a field of view.

Another technique that uses such a sensor is a structured lighttechnique. The structured light technique utilizes a pattern of spotsdisplayed across a field of view. Here, spot sizes and spot separation(e.g., distances between spots) depend on a distance to objects in thefield of view. For example, spot sizes and spot separation arecomparatively larger for objects that are further from a light source,and are comparatively smaller for objects that are closer to the lightsource. According the structured light technique, an image (e.g., a 3Dimage) is determined based on these spot sizes and separations acrossthe field of view. The spots are typically emitted by a laser inconjunction with diffractive optics, and are in a non-uniform pattern(e.g., a random pattern) in order to allow the non-uniform pattern to belocated in the image.

In an ideal case using the structured light technique, depth informationwould be determined for every point in the image. However, due to spotoverlap, filling the entire image with spots makes determining spotsizes and/or locations difficult and/or impossible. A low-densitypattern of spots is comparatively easier to locate in an image, and alsoallows for determination of variation in spot size. In other words, anauto-correlation function is sharper when using a low-density pattern.However, a low-density pattern does not provide depth information forevery point in the image, which results in an incomplete and/orinaccurate image.

One technique for providing sufficient depth information, whilepreventing spot overlap, is to display multiple, different patterns (atdifferent times). Here, the multiple patterns can, collectively, coverthe image. However, since each pattern is displayed at a different time,spot overlap can be prevented. In some cases, an emitter array (e.g., aVCSEL array) may be used to produce such patterns (or portions of arepeated pattern).

SUMMARY

According to some possible implementations, an optical device mayinclude: an array of vertical-cavity surface-emitting lasers (VCSELs)having a design wavelength, each VCSEL having an emission area; a firstmetal layer that substantially covers the array, the first metal layerincluding openings for each emission area; a second metal layer thatsubstantially covers the first metal layer; an electrical isolationlayer between the first metal layer and the second metal layer, theelectrical isolation layer including vias for electrically connectingportions of the first metal layer and portions of the second metallayer; and a dielectric disposed over the emission area of each VCSEL,the dielectric over each emission area having a thickness and an area,wherein a variation in the thickness of the dielectric across at leastapproximately 90% of the area of the dielectric is less thanapproximately 2% of the design wavelength, and wherein a depth of a wellformed by at least the first metal layer around the emission area ofeach VCSEL is equal to at least approximately 10% of a width of theemission area.

According to some possible implementations, an emitter array mayinclude: an emitter array including a set of emitters and having adesign wavelength, wherein each of the set of emitters has a respectiveemission area; a first metal layer, wherein the first metal layersubstantially covers the emitter array, and wherein the first metallayer includes openings for each emission area; a second metal layer,wherein the second metal layer substantially covers the first metallayer; an electrical isolation layer, wherein the electrical isolationlayer is between the first metal layer and the second metal layer, andwherein the electrical isolation layer includes vias for electricallyconnecting a portion of the first metal layer and portion of the secondmetal layer; and a dielectric over each emission area, wherein thedielectric over each emission area has a variation in a thickness acrossat least approximately 90% of an area of the dielectric that is lessthan approximately 2% of the design wavelength, and wherein a depth of awell formed by at least the first metal layer around the emission areais equal to at least approximately 10% of a width of the emission area.

According to some possible implementations, a vertical-cavitysurface-emitting laser (VCSEL) may include:a first metal layer thatincludes an openings for an emission area of the VCSEL; a second metallayer that substantially covers the first metal layer; an electricalisolation layer between the first metal layer and the second metallayer, the electrical isolation layer either: including a via forelectrically connecting a portion of the first metal layer and a portionof the second metal layer, or isolating the portion of the first metallayer from the portion of the second metal layer; and a dielectricdisposed over the emission area, the dielectric over the emission areahaving a thickness and an area, wherein a variation in the thicknessacross at least approximately 90% of the area of the dielectric is lessthan approximately 2% of a design wavelength associated with the VCSEL,and wherein a depth of a well formed by at least the first metal layeraround the emission area is equal to at least approximately 10% of awidth of the emission area.

According to some possible implementations, a vertical-cavitysurface-emitting laser (VCSEL) array may include: a first VCSEL to emitlight on a non-epitaxial side of a substrate, wherein a contact of thefirst VCSEL is on an epitaxial side of the substrate and is electricallyconnected to a first metal layer, wherein the first metal layer is onthe epitaxial side of the substrate and is formed substantially over theVCSEL array; and a second VCSEL to emit light on the non-epitaxial sideof the substrate, wherein a contact of the second VCSEL is on theepitaxial side of the substrate and is electrically connected to asecond metal layer, wherein the second metal layer is on the epitaxialside of the substrate and is formed substantially over the first metallayer.

According to some possible implementations, a vertical-cavitysurface-emitting laser (VCSEL) array may include: a first VCSEL to emitlight on an epitaxial side of a substrate, wherein a contact of thefirst VCSEL is on the epitaxial side of the substrate and iselectrically connected to a first metal layer, wherein the first metallayer is on the epitaxial side of the substrate and is formedsubstantially over the VCSEL array, and wherein the first metal layerincludes emission openings for the VCSELs of the VCSEL array; and asecond VCSEL to emit light on the epitaxial side of the substrate,wherein a contact of the second VCSEL is on the epitaxial side of thesubstrate and is electrically connected to a second metal layer, whereinthe second metal layer is on the epitaxial side of the substrate and isformed substantially over the first metal layer, and wherein the secondmetal layer includes emission openings for the VCSELs of the VCSELarray.

According to some possible implementations, a vertical-cavitysurface-emitting laser (VCSEL) array may include: a first VCSEL to emitlight on an emitting side of a substrate, wherein a contact of the firstVCSEL is on an epitaxial side of the substrate and is electricallyconnected to a first metal layer, wherein the first metal layer is onthe epitaxial side of the substrate and is formed substantially over theVCSEL array; and a second VCSEL to emit light on the emitting side ofthe substrate, wherein a contact of the second VCSEL is on the epitaxialside of the substrate and is electrically connected to a second metallayer, wherein the second metal layer is on the epitaxial side of thesubstrate and is formed substantially over the first metal layer. Insome implementations, the emitting side of the substrate is theepitaxial side of the substrate, and the first metal layer and thesecond metal layer include emission openings for the first VCSEL and thesecond VCSEL. In some implementations, the emitting side of thesubstrate is a non-epitaxial side of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are diagrams depicting VCSEL arrays including a singlemetal layer for connecting anodes to respective groups of emitters;

FIGS. 2A-2I are diagrams associated with an emitter array that includesmultiple metal layers for connecting randomly arranged groups ofemitters to respective anodes;

FIGS. 3A-3C are diagrams depicting top views of example arrangements ofmetal layers with respect to an emitter of the emitter array associatedwith FIGS. 2A-2I; and

FIGS. 4A-4G are diagrams associated with an example emitter array,including bottom-emitting emitters, that includes multiple metal layers.

DETAILED DESCRIPTION

The following detailed description of example implementations refers tothe accompanying drawings. The same reference numbers in differentdrawings may identify the same or similar elements. The implementationsdescribed below are merely examples and are not intended to limit theimplementations to the precise forms disclosed. Instead, theimplementations were selected for description to enable one of ordinaryskill in the art to practice the implementations. In the followingdetailed description, while layers may be described as being associatedwith or used by a single VCSEL, in some implementations, a VCSEL layermay be shared by VCSELs in a VCSEL array.

Some VCSEL arrays with multiple groups of emitters include a singlelayer (e.g., a single metal layer) for anode connections to each of thegroups of emitters. A feature in such a VCSEL array is that electricallyisolated anode connections to different groups of emitters of the VCSELarray do not overlap. For a VCSEL array with a relatively large pitch(e.g., a distance greater than 70 micrometers (μm)) between a given pairof emitters, there may be sufficient space between emitters such thatdifferent anodes can be routed among the emitters (e.g., such that adifferent group of emitters can be connected to each anode via thesingle metal layer). One such VCSEL array with such spacing is a typicalVCSEL array for data communication, which may have a large pitch (e.g.,250 μm) commensurate with optical fiber spacing in connectors.

However, in some VCSEL arrays (e.g., a VCSEL array for 3D-sensing usingthe structured light technique or the time-of-flight technique, a VCSELarray for infrared (IR) illumination, and/or the like) a number ofemitters may be large (e.g., in the hundreds), and there may beincentive to place the emitters as close as possible to one another(e.g., in order to reduce a cost or a size of a VCSEL die, which may beon a scale of approximately 1 to 2 millimeters (mm) per side). Forexample, it may be desirable that a pitch between a given pair ofemitters is less than approximately 50 μm in such cases. As a result ofthis comparatively smaller pitch, routing between emitters of such VCSELarrays may be difficult and/or impossible. Further, if relatively smallelectrical trace widths are used (e.g., in order to allow routingbetween VCSELs), these electrical traces may increase resistance and/ormay add extra heating (e.g., since these VCSEL arrays typically requirea several amperes of current).

When a VCSEL array includes a single group of emitters, a single anodetypically powers all emitters of the VCSEL array (electrically inparallel), and the single group of emitters includes every emitter inthe VCSEL array. In the case of a VCSEL with multiple groups ofemitters, each of the groups of emitters can be powered by a respectiveanode of a group of anodes.

FIG. 1A is a diagram illustrating a VCSEL array in which multiple groupsof emitters (e.g., three groups of emitters are shown in FIG. 1A) areeach powered by a different respective anode. As shown, in the VCSELarray shown in FIG. 1A, each group of emitters includes a cluster ofadjacent emitters, and each emitter of a given cluster associated with adifferent anode. In this example, each of the groups of emitters can beconnected to a respective anode using the same single metal layer. Forexample, a first portion of the metal layer may connect each emitter ina first group of emitters (e.g., emitters identified with black emissionareas) to anode 1, a second portion of the metal layer may connect eachemitter in a second group of emitters (e.g., emitters identified withdiagonally hatched emission areas) to anode 2, and a third portion ofthe metal layer may connect each emitter in a third group of emitters(e.g., emitters identified with gray emission areas) to anode 3. Here,the different portions of the metal layer are isolated from one anotherin order to allow each of the three emitter clusters to be separatelycontrolled (e.g., such that each group of emitters is independentlyaddressable). Notably, while each of the groups of emitters isseparately addressable via the same single metal layer in FIG. 1A, theclustering of emitters in each group may not be sufficient to providepatterns that are suitable for use in a structured light application(e.g., due to spot overlap, due to limited randomness, and/or the like).

In some cases, in order to improve utility in a structured lightapplication, groups of emitters may be comparatively more randomlydistributed as illustrated, for example, in FIG. 1B. In the VCSEL arrayof FIG. 1B, emitters in a given group are strung together, and areassociated with a respective anode. In the VCSEL array of FIG. 1B, agiven emitter either adjacent to at least one other emitter in the givengroup, or is near a respective anode such that it can be directlyconnected to the respective anode. Due to this arrangement, it may bepossible to connect each of the groups of emitters to an associatedanode using the same single metal layer. In such a case, the singlemetal layer forms electrical paths through a series of adjacentemitters. For example, a first portion of the metal layer may form pathsthrough strings of adjacent emitters in the first group of emitters suchthat each emitter in the first group of emitters is connected to anode1, a second portion of the metal layer may form paths through strings ofadjacent emitters in the second group of emitters such that each emitterin the second group of emitters is connected to anode 2, and a thirdportion of the metal layer may form paths through strings of adjacentemitters in the third group of emitters such that each emitter in thethird group of emitters is connected to anode 3. Here again, thedifferent portions of the metal layer are isolated from one another inorder to allow each of the three emitter clusters to be separatelycontrolled (e.g., such that each group of emitters is independentlyaddressable). However, while such a configuration may work for someapplications, this approach is generally undesirable. For example,electrical paths with a high ratio of length to width (e.g., 10 to 1 orhigher, especially if the VCSEL array is a top emitting device in whichan anode layer cannot cover emission areas of any VCSELs) haverelatively high electrical resistance, which reduceselectrical-to-optical efficiency of the VCSEL array. Thus, use of asingle metal layer to form electrical paths along the strings ofemitters may be unsuitable in practice. Further, in a structured lightapplication, it may be desirable to utilize groups of emitters that aregrouped in a comparatively more random pattern as compared to one inwhich groups of emitters comprise one or more “strings” of emitters, asillustrated in FIG. 1B. For example, in order to provide increasedrandomization, it may be desirable to have one or more emitters in agiven group of emitters that is not adjacent to any other emitters inthe given group of emitters.

Some implementations described herein provide an emitter array (e.g., aVCSEL array) including multiple metal layers that enable random groupsof (separately addressable) emitters to be provided on a same die area(e.g., for use in a 3D-sensing application). In some implementations,the multiple metal layers increase efficiency in use of the die area(e.g., by permitting multiple groups of emitters to be provided on thesame die area without an increase in minimum distance between emitters),thereby lowering die cost, optics cost, and/or assembly cost (e.g., ascompared to using separate die areas). Additionally, the emitter arraywith multiple metal layers may have increased manufacturability andlower electrical resistance (thereby improving electrical-to-opticalefficiency) as compared to a VCSEL array that uses a single metal layerdescribed above.

Notably, the implementations described herein are described in thecontext of multiple anodes, each connected to a respective group ofrandomly arranged emitters. However, the implementations describedherein can also be implemented for a case in which multiple cathodes,where each cathode is connected to respective group of randomly arrangedemitters. The implementations are described in the context of multipleanodes since isolating a p-type side of a laser's light emitting p-i-njunction is typical, which is convenient when a p-type material isclosest to an epitaxial surface (in which case an n-type material iscommon between adjacent emitters). Further, a substrate is typicallyn-type. In operation, the p-type side of the light emitting p-i-n laserjunction is biased at higher voltage than the n-type side. Hence, thep-type material is connected to the anode and n-type to the cathode.However, it is possible to grow the epitaxial material so that thep-type side of the laser's p-i-n junction is closest to the substrateand to isolate emitters using the n-type (cathode). Such a design mayrequire a p-type substrate or may be done by growth on a semi-insulatingsubstrate or a substrate electrically isolated from the p-type material.The implementations described herein are still applicable in such acase, but in such cases the multiple metal layers of the VCSEL array maybe associated with multiple cathodes (rather than multiple anodes).

Further, while the designs described herein are described in the contextof VCSELs, these designs may be applied to another type of emitterand/or optical device, such as a light emitting diode (LED), or anothertype of vertical emitting (e.g., top emitting or bottom emitting)optical device. Additionally, the designs described herein may apply toVCSELs, other types of emitters, and/or other types of optical devicesof any wavelength, power level, emission profile or the like. In otherwords, the designs described herein are not particular to a VCSEL, othertypes of emitters, or optical devices with a given performancecharacteristic.

FIG. 2A is a diagram associated with an emitter array 200 that includesmultiple metal layers for connecting arbitrarily chosen groups ofemitters, arranged on a regular lattice, to respective anodes. As shownin the top view of FIG. 2A, emitter array 200 may include multiplegroups of emitters (e.g., a randomly arranged group of emitters 202-1, arandomly arranged group of emitters 202-2, and a randomly arranged groupof emitters 202-3), each associated with a respective anode 201 (e.g.,anode 201-1, anode 201-2, and anode 201-3). As shown, each group ofemitters 202 includes emitters 202 that are arbitrarily arrangedthroughout the emitter array (e.g., rather than being clustered orstrung together as in the VCSEL arrays that include a single metal layerdescribed above). In some implementations, such patterning may besuitable for use in a 3D sensing application that uses the structuredlight technique described above.

Notably, if emitters in such randomly arranged groups were powered usinga single metal layer to connect to the anodes, narrow traces would berequired (possibly too narrow for typical fabrication tolerances)between some emitters, and these narrow traces would also breakelectrical connections to nearby emitters, further increasingresistance. However, by using multiple metal layers, as described below,these limitations are avoided.

Notably, while the example shown in FIG. 2A shows emitters located in aregular pattern and randomly associated with a given group of emitters,the VCSEL design improvements described herein also can be applied to anarray in which both the location of the emitters and their associationwith a particular group is non-random or quasi-random. Additionally,while the example shown in FIG. 2A shows the emitter array in a regularor lattice pattern, the VCSEL design improvements described herein alsocan be applied to a non-lattice (e.g., random, pseudo-random orirregular) emitter array.

FIGS. 2B-2D illustrate an example of a manner in which multiple metallayers can be used in order to connect each of the groups of emitters202 to a respective anode 201. Notably, FIGS. 2B-2D illustrate anemitter array 200 including top-emitting emitters 202. An example of abottom emitting emitter array 200 is described below with regard toFIGS. 4A-4C.

As shown in FIG. 2B, a metal layer 222-1 may be formed. As shown, metallayer 222-1 may be formed to include openings (ring-shaped openings areshown) such that portions of metal layer 222-1 over emitters 202 to becontacted by higher metal layers 222 (e.g., portions of metal layer222-1 over a contact layer of emitters 202-2 and emitters 202-3,identified as metal layer portions 222-1 a) are isolated from theremainder of metal layer 222-1 b. The openings prevent emitters 202-2and emitters 202-3, (which will be connected to anode 201-2 and anode201-3, respectively) from being connected to anode 201-1. As furthershown, the remainder of metal layer 222-1 (identified as metal layer222-1 b) connects (e.g., via a contact layer associated with eachemitter 202-1) each of a group of emitters 202-1 (e.g., identified withblack emission areas) to anode 201-1. Here, an electrical path fromanode 201-1 to a given emitter 202-1 passes through metal layer 222-1 b.

As further shown, since emitters 202 are top-emitting, an emission areaof each emitter 202 is not covered by any portion of metal layer 222-1(i.e., each metal layer portion 222-1 a includes an emission openingover a respective emitter 202 emission area, metal layer 222-1 bincludes emission openings over emission areas of emitters 202-1). Insome implementations, the emission openings include circular openings(e.g., as shown in FIGS. 2B-2D), hexagonal openings, or openings ofanother shape. In some implementations, an isolation layer (not shown)is deposited on metal layer 222-1 b in order isolate to metal layer222-1 b from a metal layer deposited after metal layer 222-1 b, asdescribed below.

As shown in FIG. 2C, a metal layer 222-2 may be formed in relation tometal layer 222-1 (e.g., above or after metal layer 222-1). As shown,metal layer 222-2 may be formed to include openings (ring-shapedopenings are shown) such that portions of metal layer 222-2 overemitters 202-3 to be contacted by higher metal layers 222 (e.g.,portions of metal layer 222-2 over metal layer portions 222-1 a,identified as metal layer portions 222-2 a) are isolated from theremainder of metal layer 222-2. The openings prevent, for example,emitters 202-3 from being connected to anode 201-2. As further shown,the remainder of metal layer 222-2 (identified as metal layer 222-2 b)connects (e.g., via metal layer portions 222-1 a and a contact layer)each of a group of emitters 202-2 (e.g., identified with diagonallyhatched emission areas) to anode 201-2. Here, an electrical path fromanode 201-2 to a given emitter 202-2 passes through metal layer 222-2 band a respective metal layer portion 221-1 a. Anode 201-1 iselectrically isolated from metal layer 222-2 (e.g., by a further openingin metal layer 222-2).

As further shown, since emitters 202 are top-emitting, an emission areaof each emitter 202 is not covered by any portion of metal layer 222-2(i.e., each metal layer portion 222-2 a includes an emission openingover a respective emitter 202 emission area, metal layer 222-2 bincludes emission openings around emitters 202-1). In someimplementations, the emission openings include circular openings (e.g.,as shown in FIGS. 2B-2D), hexagonal openings, or openings of anothershape. In some implementations, an isolation layer (not shown) isdeposited on metal layer 222-2 b in order to isolate metal layer 222-2 bfrom a metal layer deposited after metal layer 222-2 b, as describedbelow.

As shown in FIG. 2D, a metal layer 222-3 may be formed in relation tometal layers 222-1 and 222-2 (e.g., above or after metal layer 222-2).As shown, metal layer 222-3 may be formed such that metal layer 222-3connects (e.g., via metal layer portions 222-2 a, metal layer portions222-1 a, and a contact layer) each of a group of emitters 202-3 (e.g.,identified with gray emission areas) to anode 201-3. Here, an electricalpath from anode 201-3 to a given emitter 202-3 passes through metallayer 222-3, a respective metal layer portion 222-2 a, and a respectivemetal layer portion 221-1 a. Anode 201-1 and anode 201-2 areelectrically isolated from metal layer 222-3 (e.g., by further openingsin metal layer 222-3).

As further shown, since emitters 202 are top-emitting, an emission areaof each emitter 202 is not covered by any portion of metal layer 222-3(i.e., metal layer 222-3 includes emission openings around all emitters202). In some implementations, the emission openings include circularopenings (e.g., as shown in FIGS. 2B-2D), hexagonal openings, oropenings of another shape. In some implementations, an isolation layer(not shown) is deposited on metal layer 222-2 b.

In this way, multiple metal layers 222 of an emitter array 200 (e.g., aVCSEL array) may enable groups of (separately addressable) arbitrarilyarranged emitters 202 to be provided on a same die area without a needto increase a pitch between a given pair of emitters 202. Further, useof the multiple metal layers 222 may provide increased manufacturabilityand lower electrical resistance (thereby improving electrical-to-opticalefficiency) as compared to a VCSEL array that uses a single metal layer.Additional details regarding emitters 202, the arrangement of metallayers 222, and other layers of emitters 202, are described below.

FIGS. 2E, 2F, and 2G are diagram illustrating example cross-sections ofexample emitters 202 with contacts associated with a first metal layer222 of emitter array 200, a second metal layer 222 of emitter array 200,and a third metal layer 222 of emitter array 200, respectively. Themetal layers 222 are separated by isolation layers, with vias throughportions of the isolation layers to interconnect adjacent metal layers.FIGS. 2E, 2F and 2G illustrate a top emitting configuration of emitters202. A bottom emitting configuration of emitters is also possible and isdescribed in greater detail further below.

As shown in FIGS. 2E-2G, emitter 202 includes a backside layer 203, asubstrate layer 204, epitaxial layers 206 (e.g., including a bottommirror 208, an active region 210, an oxidation layer 212 (defining anoxidation aperture), a top mirror 214, and an isolation layer 216), acontact layer 218, a dielectric layer 220, a set of metal layers 222(e.g., metal layers 222-1, 222-2, and 222-3), and isolation layers 224.As shown, arrangement of metal layers 222 and isolation layer 224 varyamong the cross-sections of FIGS. 2E-2G, as described below. In someimplementations, emitter 202 may be manufactured using a series ofprocedures. For example, one or more layers of emitter 202 may becreated using one or more growth procedures, one or more depositionprocedures, one or more etching procedures, one or more oxidationprocedures, one or more implantation procedures, one or moremetallization procedures, and/or the like.

Backside layer 203 includes a layer at a backside of an emitter. Forexample, backside layer can include an electrode layer that makeselectrical contact with substrate layer 204 (e.g., a backside ofsubstrate layer 204, shown as a bottom side of substrate layer 204 inFIG. 1A). As a particular example, backside layer 203 may include anannealed metallization layer, such as a Gold-Germanimum-Nickel (AuGeNi)layer, a Palladium-Germanium-Gold (PdGeAu) layer, and/or the like. Insome implementations, backside layer 203 may be a cathode layer (e.g.,when emitter array 200 includes multiple anodes) or an anode layer(e.g., when emitter array 200 includes multiple cathodes).

In the case of bottom-emitting emitters (e.g., emitters 402 shown anddescribed below in association with FIGS. 4A-4G), portions of backsidelayer 203 over emission areas of bottom emitting emitters may include ananti-reflection coating, and elsewhere may be a metallic contact layer(e.g., an n-contact layer). In some implementations, backside layer 203may have gaps between metallic portions and anti-reflective coatedportions. In some implementations, the anti-reflective coating maypartially cover some metallic portion of backside layer 203 where anelectrical connection is not needed. For example, some metal may bedeposited between the emitters in order to reduce resistance, and thatmetal may be covered by the anti-reflective coating.

Substrate layer 204 includes a substrate upon which epitaxial layers 206are grown. In some implementations, substrate layer may be formed from asemiconductor material, such as GaAs, Indium Phosphide (InP), and/oranother type of semiconductor material.

Epitaxial layers 206 include a set of layers grown on substrate layer204. For example, epitaxial layers 206 may include an optical resonatorincluding pair of reflectors (e.g., a pair of Distributed BraggReflectors (DBRs), a pair of dielectric mirrors, and/or the like) and anactive gain medium (herein referred to as an active region), one or morelayers used to form one or more apertures (e.g., for optical and/orelectrical confinement), and/or the like, as described below. In someimplementations, epitaxial layers 206 may include a set of AlGaAs layersgrown on substrate layer 204 (e.g., a GaAs substrate). In someimplementations, epitaxial layers 206 may be grown on substrate layer204 using a Metal-Organic Chemical Vapor deposition (MOCVD) technique, aMolecular beam Epitaxy (MBE) technique, and/or the like. In someimplementations, epitaxial layers 206 may have a thickness in a rangefrom approximately 7 μm to approximately 16 μm, such as 8 μm or 13 μm.As shown, epitaxial layers 206 of emitter 202 may include bottom mirror208, active region 210, oxidation layer 212, top mirror 214, andisolation layer 216.

Bottom mirror 208 includes a bottom reflector of an optical resonator ofemitter 202. For example, bottom mirror 208 may include a distributedBragg reflector (DBR), a dielectric mirror, and/or the like. In someimplementations, bottom mirror 208 may have a thickness in a range fromapproximately 3.5 μm to approximately 9 μm, such as 5 μm.

Active region 210 includes one or more layers where electrons and holesrecombine to emit light and define the emission wavelength range of theemitter 202. For example, active region 210 may include one or morequantum wells. The active region 210 also includes cavity spacer layersbetween top mirror 214 and bottom mirror 208. The optical thickness ofactive region 210 (including cavity spacer layers) and optical thicknessof top mirror 214 and bottom mirror 208 define the resonant cavitywavelength of the emitter 202, which may be designed within an emissionwavelength range of the active region to enable lasing. In someimplementations, active region 210 may have a thickness in a range fromapproximately 0.06 μm to approximately 0.5 μm, such as 0.15 μm or 0.30μm.

Oxidation layer 212 includes an oxide layer that provides optical andelectrical confinement. In some implementations, oxidation layer 212 maybe formed as a result of oxidation of one or more epitaxial layers. Forexample, oxidation layer 212 may be an Aluminum Oxide (Al₂O₃) layerformed as a result of oxidation of an epitaxial layer (e.g., an AlGaAslayer, an Aluminum Arsenide (AlAs) layer, and/or the like). In someimplementations, oxidation layer 212 may have a thickness in a rangefrom approximately 0.007 μm to approximately 0.04 μm, such as 0.02 μm.In some implementations, oxidation trenches 230 (not shown) etchedaround emitter 202 may allow steam to access the epitaxial layer fromwhich oxidation layer 212 is formed. As shown, oxidation layer 212 maydefine an oxidation aperture (e.g., an optically active aperture). Insome implementations, the oxide aperture may be a non-circular shape,but a circle of approximately the same area may have a diameter in arange from approximately 1 μm to approximately 300 μm, such as 5 μm or 8μm.

Top mirror 214 includes a top reflector layer of emitter 202. Forexample, top mirror 214 may include a DBR, a dielectric mirror, and/orthe like. In some implementations, top mirror 214 may have a thicknessin a range from approximately 2 μm to approximately 6 μm, such as 4 μm.

Isolation layer 216 includes a layer that provides electrical isolationof emitter 202. For example, isolation layer 216 may include an ionimplanted material, such as a Hydrogen implanted material or aHydrogen/Proton implanted material. In some implementations, isolationlayer 216 may be formed by applying an ion implanting process to one ormore epitaxial layers grown on substrate layer 204. In someimplementations, isolation layer 216 may have a thickness in a rangefrom approximately 3 μm to approximately 7 μm, such as 5 μm.

Contact layer 218 includes a layer that makes electrical contact withepitaxial layers 206 (e.g., top mirror 214) through which current mayflow. Contact layer 218 may include an annealed metallization layer. Forexample, contact layer 218 may include a Chromium-Gold (Cr—Au) layer,Gold-Zinc (Au—Zn), a Titanium-Platinum-Gold (TiPtAu) layer, or the like,through which electrical current may flow. In some implementations,contact layer 218 may have a thickness in a range from approximately0.03 μm to approximately 0.3 μm, such as 0.2 μm. In someimplementations, contact layer 218 may have a ring shape, a slotted ringshape, a tooth wheel shape (e.g., as illustrated in FIGS. 3A-3C), oranother type of circular or non-circular shape (e.g., depending on adesign of emitter 202). While not shown, in some implementations,contact layer 218 is deposited such that contact layer 218 does notextend over or into a cavity used for oxidation, etching, and/or thelike. In some implementations, contact layer 218 may be electricallyconnected to anode 201 through one or more metal layers 222, asdescribed herein.

Dielectric layer 220 includes a layer that acts as a protectivepassivation layer and/or that acts as an additional DBR. For example,dielectric layer 220 may include one or more sub-layers (e.g., a SiliconDioxide (SiO₂) layer, a SiNx layer, and/or the like) deposited on one ormore epitaxial layers 206 of emitter 202 (e.g., isolation layer 216 andtop mirror 214). In some implementations, dielectric layer 220 may be aconformal coating in order to protect exposed semiconductor which may bealong trench sidewalls or shadowed by other features which anon-conformal coating (e.g., as by an evaporation) would not protectwith any appreciable thickness. For example, dielectric layer 220 may bea dielectric that is deposited by sputtering or deposited by chemicalvapor deposition (CVD), such as plasma-enhanced CVD (PECVD). In someimplementations, dielectric layer 220 may have a thickness in a rangefrom approximately 0.08 to approximately 2 um.

As shown, dielectric layer 220 may include one or more vias (e.g.,formed by etching) for electrically connecting portions of metal layer222-1 and contact layer 218. As further shown, a portion of dielectriclayer 220 over an emission area of emitter 202 may form an opticalaperture (e.g., an aperture via which light may be emitted). In someimplementations, the optical aperture may be defined by a diameter ofthe oxidation aperture, and an additional aperture may be formed indielectric layer 220 for mode selectivity. In some implementations, theoptical aperture may have a diameter in a range from approximately 2 μmto approximately 300 μm, such as 15 μm.

Metal layer 222 includes one or more metallic layers separated bydielectric layers 220 or isolation layers 224. One or more metalliclayers may be provided for forming electrical connections between anode201 and contact layer 218 (e.g., through vias in dielectric layer 220 orisolation layer 224). In some implementations, metal layer 222 may berelatively thick (e.g., with a thickness of at least approximately 1 nm,but typically less than approximately 5 μm) in order carry sufficientcurrent, and may be plated. As shown, emitter 202 may include multiplemetal layers 222 (e.g., metal layers 222-1 through 222-3). In someimplementations, a depth of a well formed by at least metal layer 222around the emission area of emitter 202 is equal to at leastapproximately 10% of a width of the emission area.

In some implementations, a portion of a given metal layer 222 may bedeposited after a time at which another portion of the given metal layer222 is deposited. For example, with reference to FIG. 2F, metal layerportion 222-1 a (e.g., a portion that provides an electrical path frommetal layer 222-2 to contact layer 218) may be deposited after metallayer 222-1 b (e.g., a portion that is isolated from metal layer 222-2).In such a case, metal layer portion 222-1 a may be deposited at a sametime as metal layer 222-2.

Alternatively, a portion of a given metal layer 222 may be deposited orformed at the same time as another portion of the given metal layer 222.For example, again with reference to FIG. 2F, metal layer portion 222-1a may be deposited at the same time as metal layer portion 222-1 b. Insuch a case, metal layer portions 222-1 a and metal layer 222-1 b may bedeposited as a single metal layer 222-1. Next, an opening may be etchedor otherwise formed in the single metal layer 222-1 (e.g., down todielectric layer 220, down to contact layer 218) in order to createseparate metal layer portion 222-1 a and metal layer 222-1 b. In such acase, isolation layer 224 may be formed on surfaces of the openingbetween metal layer portion 222-1 a and metal layer 222-1 b (e.g., inorder to isolate metal layer portion 222-1 a from metal layer 222-1 b).Here, metal layer 222-2 may be deposited on the isolation material inthe opening in order to fill the opening, if needed. A similar approachmay be used in other layers (e.g., in order to form metal layer portion222-2 a and metal layer 222-2 b in emitter 202-2 of FIG. 2G).

In some implementations, metal layer 222 may substantially cover a layerimmediately below metal layer 222 and may include openings for emissionareas of emitters 202 of emitter array 200. For example, as shown inFIG. 2E, emitter 202 may include metal layer 222-1 b that substantiallycovers epitaxial layers 206, and includes an opening for an emissionarea of emitter 202. As further shown, emitter 202 may include metallayer 222-2 b that substantially covers metal layer 222-1 b, andincludes an opening for the emission area of emitter 202. Similarly,emitter 202 may include metal layer 222-3 that substantially coversmetal layer 222-2 b, and includes an opening for the emission area ofemitter 202. As further shown, portions of a given metal layer 222 maybe electrically isolated from portions of another metal layer 222 by anisolation layer 224. Notably, since emitter 202 is a top-emittingemitter, metal layers 222 are arranged with openings such that metallayers 222 do not block light from emitter 202 or any other emitters inthe emitter array 200. In a bottom-emitting emitter configuration, suchopenings may not be necessary.

Multiple metal layers 222 enable multiple electrically isolated groupsof emitters to be provided by emitter array 200 from a same die area,without restriction on a layout or a selection of emitters in a givengroup. For example, emitter array 200 may include multiple anodes 201(e.g., anode 201-1, anode 201-2, and anode 201-3), each to power a groupof emitters (which can be arbitrarily chosen among all emitters in thearray, but which does not include emitters from other groups) (e.g., agroup of emitters 202-1, a group of emitters 202-2, and a group ofemitters 202-3, respectively) in the same die area, as described abovein association with FIG. 2A. Here, each emitter 202-1 is electricallyconnected to anode 201-1 (and is not electrically connected to anode201-2 or anode 201-3), each emitter 202-2 is electrically connected toanode 201-2 (and is not electrically connected to anode 201-1 or anode201-3), and each emitter 202-3 is electrically connected to anode 201-3(and is not electrically connected to anode 201-2 or anode 201-1).

As one example, if emitters 202-1 are to be connected to anode 201-1through metal layer 222-1 b, then emitters 202-1 may have across-section similar to that shown in FIG. 2E. Here, contact layer 218of a given emitter 202-1 is contacted by metal layer 222-1 b (through avia in dielectric layer 220). Continuing with this example, if emitters202-2 are to be connected to anode 201-2 associated with metal layer222-2, then emitters 202-2 may have a cross-section similar to thatshown in FIG. 2F. Here, contact layer 218 of a given emitter 202-2 iscontacted by metal layer 222-2 b (through a metal layer portion 222-1 aover the given emitter 202-2, a via in isolation layer 224, and a via indielectric layer 220). Further, if emitters 202-3 are to be connected toanode 201-3 associated with metal layer 222-3, then emitters 202-3 mayhave a cross-section similar to that shown in FIG. 2G. Here, contactlayer 218 of a given emitter 202-3 is contacted by metal layer 222-3(through a metal layer portion 222-2 a over the given emitter 202-3, ametal layer portion 222-1 a over the given emitter 202-3, a via inisolation layer 224, and a via in dielectric layer 220).

In some implementations, an electrical path from a given emitter 202 toan associated anode 201 may pass through one or more metal layers 222,and isolation between electrical paths associated with different anodes201 may be provided by portions of isolation layer 224. Thus, byappropriate arrangement of metal layers 222 and isolation layer 224,each emitter 202 can be powered by an associated anode 201 in order toenable multiple (arbitrarily chosen) groups of emitters from emitterarray 200 to be present on a same die area. Further, since electricalconnections are achieved using relatively thick metal layers 222,resistance associated with emitter array 200 is reduced, meaning thatelectrical-to-optical efficiency is increased. Additionally, since theconfiguration of metal layers can define the groups of emitters, theepitaxial growth of the array of emitters may not need to be changedwhen changing the configuration of the groups of emitters. In otherwords, a template VCSEL array may be grown which can later be configured(by defining the metal layers) for different groups of emitters orpatterns of structured light.

Isolation layer 224 includes an electrical isolation layer (e.g., adielectric layer) to electrically isolate a portion of a given metallayer 222 from a portion of another metal layer 222 (e.g., in order toisolate metal layer 222-1 b from metal layer 222-2 b, in order toisolate metal layer 222-2 b from metal layer 222-3) or another portionof the given metal layer 222 (e.g., in order to isolate a metal layerportion 222-1 a from metal layer 222-2 b, in order to isolate a metallayer portion 222-2 a from metal layer 222-2 b). In someimplementations, a portion of isolation layer 224 may be disposedbetween a pair of metal layers 222 (e.g. in openings other than emissionopenings). In some implementations, isolation layer 224 may include viasfor electrically connecting portions of a pair of metal layers 222. Insome implementations, a portion of isolation layer 224 may be disposedbetween portions of a given metal layer 222 (e.g. in openings other thanemission openings in order to electrically isolate one portion of thegiven metal layer 222 from another portion of the given metal layer222).

In some implementations, isolation layer 224 may need to be a conformallayer in order to provide adequate electrical insulation. For example,since plated metal layers are not typically smooth, isolation layer 224may be sputtered or deposited by CVD (e.g., PECVD) in order to achievesufficient electrical isolation or dielectric coverage. In someimplementations, isolation layer 224 may be deposited in multiple stepsduring manufacture of emitter array 200 (e.g., a portion of isolationlayer may be deposited after a given metal layer 222 is deposited). Insome implementations, isolation layer 224 may be the same as, ordifferent from isolation layer 216 or dielectric layer 220.

For a top-emitting emitter, such as emitter 202, a thickness of adielectric material over the emission area should be controlled, andvariation of the thickness of the dielectric material across theemission area should be minimized (e.g., in order to allow emitter 202to achieve acceptable optical performance). However, deposition of adielectric material using a conformal technique (e.g., sputtering,deposition by CVD, and/or the like) tends to result in a conformalcoating that varies in thickness at or near tall features (e.g.,features with a height that is greater than approximately 0.5 μm). Forexample, our studies have found a thickness of a conformal coating nearan edge of a feature that is taller than 1 μm may be as much as 20%thinner than a field thickness, and may include further variationsacross the emission area. Such variation in thickness is not acceptablefor a dielectric material over the emission area that has thickness thatis greater than a small fraction (e.g., less than approximately 50 nm)of a design wavelength for a design wavelength that is in a range fromapproximately 850 nm to approximately 1100 nm. This is problematic sincea typical dielectric over the emission area in emitter 202 may need tohave a thickness of at least approximately 100 nm in order to providesufficient insulation and low capacitance.

Thus, since isolation layer 224 may need to be a conformal coating (inorder to provide sufficient dielectric coverage) that is deposited aftera portion of a given metal layer 222, and since metal layer 222 may berelatively thick (e.g., such that a well is formed by at least metallayer 222-1 around the emission area), variation of thickness ofdielectric material across the emission area of emitter 202 may beunacceptable if isolation layer 224 is present over the emission area.

When deposited as a conformal coating, isolation layer 224 may overlaythe entire surface of the wafer/device and may fall directly upondielectric layer 220. However, it is desired to remove isolation layer224 from the emission area because of its variation in thickness.Commonly, such an isolation layer is formed from silicon dioxide,silicon nitride, silicon oxynitride, and/or the like. Dielectric layer220 may also be formed from silicon dioxide, silicon nitride, siliconoxynitride, and/or the like, since these materials are established inPECVD systems. However, there are no highly selective etches betweenthese varieties of materials.

If a non-selective etch is used to remove isolation layer 224 when itrests above dielectric layer 220 in the emission area, then it ispreferred to remove both isolation layer 224 and dielectric layer 220over the emission area. Otherwise, the remaining portion of dielectriclayer 220 may be of the similar non-uniform shape as isolation layer 224and may have an unacceptable error in average thickness. However,removal of dielectric layer 220 in the emission area (without additionalprocess steps) would leave the surface of the semiconductor exposed,which is a risk for device reliability (particularly in a moistenvironment).

Exposure of the semiconductor surface in the emission area may bepartially remedied by deposition of an additional coating. FIG. 2H is adiagram depicting a cross-section of alternative emitters 202 in which athickness of a dielectric over the emission area can be controlled suchthat variation of the thickness of the dielectric across the emissionarea is minimized.

As shown in FIG. 2H, in some implementations, both isolation layer 224and dielectric layer 220 may not be present over the emission area ofemitter 202. Rather, as shown in FIG. 2H, emitter 202 may include anon-conformal coating 226 in the emission area. In some implementations,non-conformal coating 226 may be a relatively thick dielectric layer(e.g., a dielectric layer with a thickness that is greater thanapproximately 100 nm). In some implementations, non-conformal coating226 may be deposited after a last metal layer 222 (e.g., after metallayer 222-3) using a non-conformal technique, such as evaporation. Insome implementations, non-conformal coating may comprise SiO2, MgO, oranother type of material suitable for deposition using a non-conformaltechnique. Here, since non-conformal coating 226 is non-conformal,variation in thickness of non-conformal coating 226 may not besignificant across the emission area of emitter 202. Thus, dielectricthickness over the emission area can be controlled with minimalvariation (e.g., such that the variation in the thickness of thedielectric across at least approximately 90% of the area of thedielectric in the emission area of emitter 202 is less thanapproximately 2% of the design wavelength).

As further shown in FIG. 2H, non-conformal coating 226 may be present onone or more other surfaces of emitter 202, in some cases. However,presence of non-conformal coating 226 on these surfaces may be optionaland may not impact performance of emitter 202.

The removal of layer 220 over the emission area in FIG. 2H may have aslight lateral undercut and non-conformal coating 226, beingnon-conformal, may not adequately cover the resulting exposedsemiconductor. In some implementations, in order to provide additionalprotection (e.g., from high humidity and/or high temperature), emitter202 may include an ultra-thin film (not shown) over non-conformalcoating 226 in the emission area. In some implementations, theultra-thin film may be a dielectric layer with a thickness that is lessthan approximately 50 nm. In some implementations, the ultra-thin filmmay comprise Al₂O₃ or other another type of dielectric material. In someimplementations, the ultra-thin film may be a coating deposited byatomic layer deposition (ALD). Notably, while ALD is conformal and maysuffer the same non-uniformity in thickness as, for example, a PECVDcoating, the ultra-thin film is sufficiently thin so that error in theoptical thickness is negligible.

A variation on the above implementation is to remove layer 220 in theemission area and apply only a very thin ALD coating, as discussedabove, without non-conformal coating 226. However, non-conformal coating226 may provide additional lateral thermal conductivity (particularly inthe case of MgO) which is desirable for improved device performance.

Although the implementation shown in FIG. 2H may achieve the desirablefeatures of a uniform coating in the emission area and moistureresistance, it may require additional processing steps and depositionmethods and materials not required for VCSELs with a single anode layer.As such, in some implementations, the emission area of emitter 202 maynot have any thick conformal coating that is deposited after metallayers 222, but may retain a dielectric layer 220 over the emissionarea. For example, as shown in emitters 202 of FIGS. 2E-2G, isolationlayer 224 may not be present over the emission area of emitter 202.Rather, only dielectric layer 220 (e.g., deposited before metal layer222-1) may be present over the emission area. In this way, a thicknessof a dielectric over the emission area can be controlled such thatvariation of the thickness of the dielectric across the emission area isminimized (e.g., such that the variation in the thickness of thedielectric across at least approximately 90% of the area of thedielectric in the emission area of emitter 202 is less thanapproximately 2% of the design wavelength). FIG. 2H has been illustratedin respect of an emitter 202 electrically connected to metal layer 222-1b. The non-conformal coating 226 of FIG. 2H may also be applied, ifdesired, to emitters electrically connected to other metal layers.

In some implementations, with reference to FIG. 2E, in order to provideadditional protection (e.g., from high humidity and/or hightemperature), emitter 202 may include a thin film coating (not shown)over dielectric layer 220 in the emission area, as described above.

FIG. 2I is a diagram depicting a cross-section of an alternative emitter202 in which a thickness of a dielectric over the emission area can becontrolled such that variation of the thickness of the dielectric acrossthe emission area is minimized.

As shown in FIG. 2I, in some implementations, isolation layer 224 maynot be present over the emission area of emitter 202, while dielectriclayer 220 and a second dielectric layer 228 may be present over theemission area. In some implementations, second dielectric layer 228 maybe disposed on dielectric layer 220 in at least the emission area. Insome implementations, second dielectric layer 228 serves as an etch-stoplayer that prevents a portion of dielectric layer 220 in the emissionarea from being etched (e.g., such that the portion of dielectric layer220 in the emission area is not etched during removal of a portion ofisolation layer 224 from the emission area). For example, seconddielectric layer 228 may be an Al₂O₃ layer that serves as an etch stopfor etching of isolation layer 224 when isolation layer 224 comprisesPECVD deposited SiN.

In some implementations, second dielectric layer 228 may be anon-conformal coating (e.g., deposited using evaporation). In someimplementations, second dielectric layer 228 may be a conformal coating(e.g., deposited using ALD) with a thickness that is less thanapproximately 5% of the design wavelength of emitter 202. In someimplementations, second dielectric layer 228 may be deposited aftermetal layer 222-1 and before metal layer 222-2 (e.g. before depositing afirst of isolation layer 224).

Here, since second dielectric layer 228 is a non-conformal coating or anultra-thin conformal coating, variation in thickness of dielectricmaterial (e.g., a thickness of dielectric layer 220 plus a thickness ofsecond dielectric layer 228) may not be significant across the emissionarea of emitter 202. Thus, dielectric thickness over the emission areacan be controlled with minimal variation (e.g., such that the variationin the thickness of the dielectric across at least approximately 90% ofthe area of the dielectric in the emission area of emitter 202 is lessthan approximately 2% of the design wavelength).

As further shown in FIG. 2I, second dielectric layer 228 may be presenton one or more other surfaces of emitter 202, in some cases. However,presence of second dielectric layer 228 on these surfaces may not impactperformance of emitter 202. In some implementations, in order to provideadditional protection (e.g., from high humidity and/or hightemperature), emitter 202 may include an ultra-thin film (not shown)over second dielectric layer 228 in the emission area, as describedabove. FIG. 2I has been illustrated in respect of an emitter 202electrically connected to metal layer 222-1 b. The second dielectriclayer 228 of FIG. 2I may also be applied, if desired, to emitterselectrically connected to other metal layers.

In some implementations, second dielectric layer 228 may be removed inthe emission area where second dielectric layer 228 lies on top ofdielectric layer 220. The final device emissions area then appears likethat in FIG. 2E. However, second dielectric layer 228 may remain inother regions, such as beneath isolation layer 224.

Another implementation is to construct dielectric layer 220 (e.g.,before deposition of a first of metal layer 222) partially or entirelywith a coating that serves as a stop-etch layer. For example, dielectriclayer 220 may include a lower layer of a conformal coating, such assilicon nitride, and an upper layer of Al₂O₃ (e.g., deposited by ALD orby evaporation) that serves as an etch stop for etching of isolationlayer 224 (e.g., when isolation layer 224 comprises PECVD deposited SiNor a similar material, such as silicon oxynitride or silicon nitride).The resulting device cross-section appears as in FIGS. 2E-2G. However,dielectric layer 220 may be thinner in the emission area, if thestop-etch layer is not the uppermost layer within dielectric layer 220.

The number and arrangement of layers shown in FIGS. 2A-2I are providedas an example. In practice, emitter array 200 may include additionalemitters 202, fewer emitters 202, different emitters 202, differentlyarranged emitters 202, and/or the like, than those shown in FIG. 2A.Similarly, emitter 202 may include additional layers, fewer layers,different layers, differently arranged layers, layers with differentthicknesses or relative thicknesses, and/or the like, than those shownin FIGS. 2A-2I. For example, emitter 202 may include a different number(e.g., two, more than three) and/or arrangement of metal layers 222 thanshown and described in association with in FIGS. 2B-2I. Further, whilethree metal layers 222 are shown for three anodes 201, it may also bepossible to combine some connections on a single layer. In other words,a number of metal layers 222 may not be equal to (e.g., may be lessthan) a number of anodes 201, in some implementations. In someimplementations, multiple anodes 201 may connect to the same group ofemitters. Additionally, a set of layers (e.g., one or more layers) ofemitter 202 may perform one or more functions described as beingperformed by another set of layers of emitter 202.

FIGS. 3A-3C are diagrams depicting top views of additional examplearrangements of metal layers 222 with respect to top-emitting emitter202. Notably, for illustrative purposes, only a single metal layer 222is illustrated, while other metal layers 222 may be present, asdescribed below with regard to each of FIGS. 3A-3C.

FIG. 3A is a diagram depicting a top view of a first metal layer 222with respect to emitter 202, where the illustrated first metal layer 222does not connect to emitter 202. For purposes of illustrating thearrangement of the first metal layer 222, only the first metal layer 222is shown in FIG. 3A, but other metal layers 222 may be present aboveand/or below the first metal layer 222. In the example shown in FIG. 3A,emitter 202 is to be contacted on another metal layer 222 that is abovethe first metal layer 222 in FIG. 3A. As shown, the first metal layer222 may comprise a metal layer portion 222 a and metal layer 222 b. InFIG. 3A, metal layer 222 a is a portion of the first metal layer 222over contact layer 218 of emitter 202, and that is isolated from metallayer 222 b. The first metal layer 222 may correspond to, for example,metal layer 222-1 in FIG. 2F (e.g., comprising metal layer portion 222-1a and metal layer 222-1 b), metal layer 222-1 in FIG. 2G (e.g.,comprising metal layer portion 222-1 a and metal layer 222-1 b), ormetal layer 222-2 in FIG. 2G (e.g., comprising metal layer portion 222-2a and metal layer 222-2 b).

As further shown, the first metal layer 222 may cover oxidation trenches230 surrounding emitter 202. As further shown, metal layer 222 b may bepresent over portions of isolation layer 216 (e.g., portions ofisolation layer 216 outside of an inner boundary of isolation layer 216,as identified in FIG. 3A). In some implementations, a lateral distancebetween metal layer 222 b and the inner boundary of isolation layer 216may be at least approximately 0.5 μm. Further, no portion of the firstmetal layer 222 may be present over the emission area of emitter 202.

FIG. 3B is a diagram depicting a top view of a second metal layer 222with respect to emitter 202, where the second metal layer connects toemitter 202. For purposes of illustrating the arrangement of the secondmetal layer 222, only the second metal layer 222 is shown in FIG. 3B,but other metal layers 222 may be present above and/or below the secondmetal layer 222. The second metal layer 222 of FIG. 3B may correspondto, for example, metal layer 222-1 b in FIG. 2E, metal layer 222-2 b inFIG. 2F, or metal layer 222-3 in FIG. 2G.

When the second metal layer 222 corresponds to metal layer 222-1 b inFIG. 2E, the second metal layer 222 may be present over oxidationtrenches 230 surrounding emitter 202, as well as portions of contactlayer 218 (e.g., such that the second metal layer 222 b contacts contactlayer 218 through vias in a dielectric layer 220 (not shown)). When thesecond metal layer 222 corresponds to metal layer 222-2 b in FIG. 2F,the second metal layer 222 may cover metal layer portion 222-1 a overcontact layer 218 and may be present over, but isolated from, metallayer 222-1 b. Here, metal layer 222-2 is connected to contact layer 218(through metal layer portion 222-1 a and a via in dielectric layer 220(not shown)). When the second metal layer 222 corresponds to metal layer222-3 in FIG. 2G, the second metal layer 222 may cover metal layerportion 222-2 a (which covers metal layer portion 222-1 a over contactlayer 218), and may be present over, but isolated from, metal layer222-2 b. Here, metal layer 222-3 is connected to contact layer 218(through metal layer portion 222-2 a, metal layer portion 222-1 a, and avia in dielectric layer 220 (not shown)). Further, as shown, no portionof the second metal layer 222 may be present over the emission area ofemitter 202.

FIG. 3C is a diagram depicting a top view of a third metal layer 222with respect to emitter 202, where the third metal layer 222 does notconnect to emitter 202. For purposes of illustrating the arrangement ofthe third metal layer 222, only the third layer 222 is shown in FIG. 3C,but other metal layers 222 may be present above and/or below the thirdmetal layer 222. In the example shown in FIG. 3C, emitter 202 is to becontacted on another metal layer 222 that is below the third metal layer222. For example, the third metal layer 222 of FIG. 3C may correspond tometal layer 222-3 in FIG. 2E, metal layer 222-2 b in FIG. 2E, or metallayer 222-3 in FIG. 2F.

As shown in FIG. 3C, the third metal layer 222 may be present overoxidation trenches 230 surrounding emitter 202 and portions of isolationlayer 216. In some implementations, as shown, the third metal layer 222may not be present over portions of contact layer 218. Further, noportion of the third metal layer 222 may be present over the emissionarea of emitter 202.

As indicated above, FIGS. 3A-3C are provided merely as examples toillustrate possible arrangements of metal layers 222. Other examples arepossible and may differ from what was described with regard to FIGS.3A-3C.

In some implementations, an emitter array including bottom-emittingemitters may include multiple metals layers in order to providearbitrarily groupings of emitters on the same die area (e.g., in orderto enable random multi-patterned structured light to be provided, in amanner similar to that described above).

FIGS. 4A-4G are diagrams associated with an example emitter array 400including emitters 402 that are bottom emitting. Emitter 402 may besimilar in structure to emitter 202 with changes to make the emitterbottom emitting. For example, the mirror layers 214, 210 may beconfigured differently to allow emission out the bottom throughsubstrate layer 204. However, dielectric layer 220 may not be presentover the aperture and metal layers 222 of emitters 402 may bedifferently arranged. Emitter cross-sections showing more detail will bedescribed for FIGS. 4D-4G.

For emitter array 400 with bottom-emitting emitters 402, metal layers222 do not interfere with the laser light output (i.e., there is no needfor metal layers 222 to have emission openings to avoid an emission areaof emitter 402 since the emission area is on the bottom of emitter 402).FIGS. 4A-4D illustrate a manner in which emitters 402 in differentgroups can be connected to respective anodes 201 via multiple metallayers 222.

As shown in FIG. 4A, a metal layer 222-1, comprising metal layerportions 222-1 a and metal layer 222-1 b, may be formed. As shown, metallayer 222-1 may be formed to include openings (ring-shaped openings areshown) such that metal layer portions 222-1 a over emitters 402 to becontacted by higher metal layers 222 are isolated from metal layer 222-1b. The openings prevent emitters 402-2 and emitters 402-3 (which will beconnected to anode 201-2 and anode 201-3, respectively) from beingconnected to anode 201-1. As further shown, metal layer 222-1 b connects(e.g., via a contact layer associated with each emitter 402-1) each of agroup of emitters 402-1 (e.g., identified with dotted circles in FIG.4A) to anode 201-1. Here, an electrical path from anode 201-1 to a givenemitter 402-1 passes through metal layer 222-1 b.

As further shown, since emitters 402 are bottom-emitting, an emissionarea of each emitter 402 may be covered by metal layer 222-1 b or ametal layer portion 222-1 a. In some implementations, an isolation layer(not shown) is deposited on metal layer 222-1 b in order to isolatemetal layer 222-1 b from a metal layer deposited after metal layer 222-1b. In some implementations, isolation layer 224 is not formed on metallayer portions 222-1 a over emitters 402 associated with other groups ofemitters (e.g., in order to provide an electrical path to metal layerportion 222-1 a).

As shown in FIG. 4B, a metal layer 222-2, comprising metal layerportions 222-2 a and metal layer 222-2 b, may be formed. As shown, metallayer 222-2 may be formed to include openings (ring-shaped openings areshown) such that metal layer portions 222-2 a over emitters 402 to becontacted by higher metal layers 222 are isolated from metal layer 222-2b. For example, the openings prevent emitters 402-3 (which may beconnected to anode 201-3) from being connected to anode 201-2. Asfurther shown, metal layer 222-2 b connects (e.g., via a contact layerassociated with each emitter 402-2 and a respective metal layer portion222-1 a over each emitter) each of a group of emitters 402-2 (e.g.,identified with dotted circles in FIG. 4B) to anode 201-2. Here, anelectrical path from anode 201-2 to a given emitter 402-2 passes throughmetal layer 222-2 b and a metal layer portion 222-1 a over the givenemitter 402-2. Anode 201-1 is electrically isolated from metal layer222-2 (e.g., by a further opening in metal layer 222-2).

As further shown, since emitters 402 are bottom-emitting, an emissionarea of each emitter 402 may be covered by metal layer 222-2 b or ametal layer portion 222-2 a. In some implementations, an isolation layer(not shown) is deposited on metal layer 222-2 b in order to isolatemetal layer 222-2 b from a metal layer deposited after metal layer 222-2b. In some implementations, isolation layer 224 is not formed on metallayer portions 222-2 a over emitters 402 associated with other groups ofemitters (e.g., in order to provide an electrical path through metallayer portion 222-2 a).

As shown in FIG. 4C, a metal layer 222-3 may be formed. As shown, metallayer 222-3 may be formed such that metal layer 222-2 b connects (e.g.,via a contact layer associated with each emitter 402-3, a respectivemetal layer portion 222-1 a over each emitter, and a respective metallayer portion 222-2 a over each emitter) each of a group of emitters402-3 (e.g., identified with dotted circles in FIG. 4C) to anode 201-3.Here, an electrical path from anode 201-3 to a given emitter 402-3passes through metal layer 222-3, a metal layer portion 222-2 a over thegiven emitter, and a metal layer portion 222-1 a over the given emitter402-2. Anode 201-1 and anode 201-2 are electrically isolated from metallayer 222-3 (e.g., by further openings in metal layer 222-3).

As further shown, since emitters 402 are bottom-emitting, an emissionarea of each emitter 402 is covered by metal layer 222-3. In someimplementations, an isolation layer (not shown) is deposited on metallayer 222-3 in order to isolate metal layer 222-3.

In this way, multiple metal layers 222 of an emitter array 400 (e.g., aVCSEL array) may enable arbitrarily arranged (separately addressable)groups of emitters 402 to be provided on a same die area without a needto increase a pitch between a given pair of emitters 402. Further, useof the multiple metal layers 222 may provide increased manufacturabilityand lower electrical resistance (thereby improving electrical-to-opticalefficiency) as compared to a VCSEL array that uses a single metal layer.

FIG. 4D is an example cross section of an example bottom-emittingemitter array 400. As shown in FIG. 4D, metal layers 222 and isolationlayers 224 can be arranged such that emitter 402-2 is connected to anode201-2 by portions of metal layers 222-1, 222-2, and 222-3 (e.g., throughvias in isolation layer 224). Similarly, metal layers 222 and isolationlayers 224 can be arranged such that emitter 402-3 is connected to anode201-3 by portions of metal layers 222-1, 222-2, and 222-3 (e.g., throughvias in isolation layer 224 metal layer 222). Further, while notillustrated in the cross-section of FIG. 4D, metal layers 222 andisolation layers 224 can be arranged such that emitter 402-1 isconnected to anode 201-1 by portions of metal layers 222-1, 222-2, and222-3 (e.g., through vias in isolation layer 224). In someimplementations, as shown, a backside layer 203 of emitter array 400 mayinclude an anti-reflective coating over emission areas of emitters 402(e.g., identified by the hatched portions of the backside layer ofemitter array 400), and elsewhere may include a metallic contact layer.

In some implementations, the use of multiple metal layers 222 on theepitaxial side of a bottom emitting emitter array 400 permits a metalthermal pad to be disposed over emitters 402 without shorting anodes201.

As described for top emitting VCSELs, portions of some of the metallayers may be deposited in a different grouping, but with the sameresulting electrical configuration. Analogously, this approach isillustrated in FIGS. 4E-4G showing cross sections of bottom-emittingemitters 402. FIG. 4E is an example cross section of an emitter 402-1that is contacted by metal layer 222-1. In this case, the cross-sectionis the same as for emitter 402-1 in FIG. 4D. FIG. 4F is an example crosssection of an emitter 402-2 that is contacted by metal layer 222-2, andFIG. 4G is an example cross section of an emitter 402-3 that iscontacted by metal layer 222-3.

As shown in FIG. 4E, contact layer 218 of emitter 402-1 is connected tometal layer 222-1, which can be connected to anode 201-1 (i.e., theanode 201 that is associated with a group of emitters 402-1). As shownin FIG. 4E, metal layer 222-1 and isolation layers 224 of emitter 402-1may be formed such that metal layer 222-1 is isolated from metal layer222-2 and metal layer 222-3, in some implementations.

As shown in FIG. 4F, contact layer 218 of emitter 402-2 is connected tometal layer 222-2, which can be connected to anode 201-2 (i.e., theanode 201 that is associated with a group of emitters 402-2). As shownin FIG. 4F, near emitter 402-2, metal layer 222-1 may be formed suchthat metal layer 222-1 is not present over contact layer 218 of emitter402-2. As such, and as indicated in FIG. 4F, when metal layer 222-2 isformed, metal layer 222-2 contacts contact layer 218 of emitter 402-2.As further shown, isolation layers 224 of emitter 402-2 may be formedsuch that metal layer 222-2 is isolated from metal layer 222-1 and metallayer 222-3, in some implementations.

As shown in FIG. 4G, contact layer 218 of emitter 402-3 is connected tometal layer 222-3, which can be connected to anode 201-3 (i.e., theanode 201 that is associated with a group of emitters 402-3). As shownin FIG. 4G, near emitter 402-3, both metal layer 222-2 and metal layer222-1 may be formed such that metal layer 222-2 and metal layer 222-1are not present over contact layer 218 of emitter 402-3. As such, and asindicated in FIG. 4G, when metal layer 222-3 is formed, metal layer222-3 contacts contact layer 218 of emitter 402-3. As further shown,isolation layers 224 of emitter 402-3 may be formed such that metallayer 222-3 is isolated from metal layer 222-1 and metal layer 222-3, insome implementations.

The number and arrangement of emitters and layers shown in FIGS. 4A-4Gare provided as examples. In practice, emitter array 400 may includeadditional emitters 402, fewer emitters 402, different emitters 402,differently arranged emitters 402, and/or the like, than those shown inFIGS. 4A-4G. Similarly, emitter 402 may include additional layers, fewerlayers, different layers, differently arranged layers, layers withdifferent thicknesses or relative thicknesses, and/or the like, thanthose shown in FIGS. 4A-4G. For example, emitter 402 may include adifferent number (e.g., two, more than three) and/or arrangement ofmetal layers 222 than shown and described in association with in FIGS.4A-4G. Further, while three metal layers 222 are shown for three anodes201, it may also be possible to combine some connections on a singlelayer. In other words, a number of metal layers 222 may not be equal to(e.g., may be less than) a number of anodes 201, in someimplementations. Additionally, a set of layers (e.g., one or morelayers) of emitter 402 may perform one or more functions described asbeing performed by another set of layers of emitter 402.

Some implementations described herein provide an emitter array (e.g., anarray of VCSELs, also referred to as VCSEL array) including multiplemetal layers 222 that enable arbitrarily arranged groups of emitters tobe provided from a same die area (e.g., for use in a 3D-sensingapplication). In some implementations, multiple metal layers 222increase efficiency in use of the die area (e.g., by permitting multiplepatterns to be displayed from the same die area), thereby lowering diecost, optics cost, and/or assembly cost (e.g., as compared to usingseparate die areas). Additionally, emitter array 200 with multiple metallayers 222 may have increased manufacturability and lower electricalresistance (thereby improving electrical-to-optical efficiency) ascompared to a VCSEL array that uses a single metal layer. Further, sincethe configuration of metal layers can define the groups of emitters, theepitaxial growth of the array of emitters may not need to be changedwhen changing the configuration of the groups of emitters. In otherwords, a template VCSEL array may be grown which can later be configured(by defining the metal layers) for different groups of emitters orpatterns of structured light.

In some implementations, a VCSEL array may include a first VCSEL to emitlight on a non-epitaxial side of a substrate. A contact of the firstVCSEL may be on an epitaxial side of the substrate and may beelectrically connected to a first metal layer. The first metal layer maybe on the epitaxial side of the substrate and may be formedsubstantially over the VCSEL array. The VCSEL array may include a secondVCSEL to emit light on the non-epitaxial side of the substrate. Acontact of the second VCSEL may be on the epitaxial side of thesubstrate and may be electrically connected to a second metal layer. Thesecond metal layer may be on the epitaxial side of the substrate and maybe formed substantially over the first metal layer.

In some implementations, a VCSEL array may include a first VCSEL to emitlight on an epitaxial side of a substrate. A contact of the first VCSELmay be on the epitaxial side of the substrate and is electricallyconnected to a first metal layer. The first metal layer may be on theepitaxial side of the substrate and may be formed substantially over theVCSEL array. The first metal layer may include emission openings for theVCSELs of the VCSEL array. The VCSEL array may include a second VCSEL toemit light on the epitaxial side of the substrate. A contact of thesecond VCSEL may be on the epitaxial side of the substrate and may beelectrically connected to a second metal layer. The second metal layermay be on the epitaxial side of the substrate and may be formedsubstantially over the first metal layer. The second metal layer mayinclude emission openings for the VCSELs of the VCSEL array.

In some implementations, a VCSEL array may include a first VCSEL to emitlight on an emitting side of a substrate. The emitting side of thesubstrate may be an epitaxial side of the substrate (e.g., a top orfront side of the substrate when, for example, VCSELs of the VCSEL arrayare top-emitting VCSELs), or may be a non-epitaxial side of thesubstrate (e.g., a back side of the substrate when, for example, theVCSELs of the VCSEL array are bottom-emitting VCSELs). A contact of thefirst VCSEL may be on the epitaxial side of the substrate and may beelectrically connected to a first metal layer. The first metal layer maybe on the epitaxial side of the substrate and may be formedsubstantially over the VCSEL array. The VCSEL array may include a secondVCSEL to emit light on the emitting side of the substrate. A contact ofthe second VCSEL may be on the epitaxial side of the substrate and maybe electrically connected to a second metal layer. The second metallayer may be on the epitaxial side of the substrate and may be formedsubstantially over the first metal layer. In some implementations, whenthe emitting side of the substrate is the epitaxial side of thesubstrate, the first metal layer and the second metal layer may includeemission openings for the first VCSEL and the second VCSEL.

The foregoing disclosure provides illustration and description, but isnot intended to be exhaustive or to limit the implementations to theprecise form disclosed. Modifications and variations are possible inlight of the above disclosure or may be acquired from practice of theimplementations.

Even though particular combinations of features are recited in theclaims and/or disclosed in the specification, these combinations are notintended to limit the disclosure of possible implementations. In fact,many of these features may be combined in ways not specifically recitedin the claims and/or disclosed in the specification. Although eachdependent claim listed below may directly depend on only one claim, thedisclosure of possible implementations includes each dependent claim incombination with every other claim in the claim set.

No element, act, or instruction used herein should be construed ascritical or essential unless explicitly described as such. Also, as usedherein, the articles “a” and “an” are intended to include one or moreitems, and may be used interchangeably with “one or more.” Furthermore,as used herein, the term “set” is intended to include one or more items(e.g., related items, unrelated items, a combination of related items,and unrelated items, etc.), and may be used interchangeably with “one ormore.” Where only one item is intended, the term “one” or similarlanguage is used. Also, as used herein, the terms “has,” “have,”“having,” or the like are intended to be open-ended terms. Further, thephrase “based on” is intended to mean “based, at least in part, on”unless explicitly stated otherwise.

1-20. (canceled)
 21. An optical device comprising: an array ofvertical-cavity surface-emitting lasers (VCSELs), each VCSEL having anemission area; a first metal layer that substantially covers the array,the first metal layer including openings for each emission area, and thefirst metal layer being connected to a first group of emitters of thearray; a second metal layer that substantially covers the first metallayer, the second metal layer being connected to a second group ofemitters of the array, wherein the second group does not includeemitters of the first group; and an electrical isolation layer betweenthe first metal layer and the second metal layer, the electricalisolation layer including vias for electrically connecting portions ofthe first metal layer and portions of the second metal layer.
 22. Theoptical device of claim 21, wherein the first metal layer connects thefirst group to a first anode and the second metal layer connects thesecond group to a second anode.
 23. The optical device of claim 21,further comprising: a third metal layer that substantially covers thesecond metal layer, the third metal layer being connected to a thirdgroup of emitters of the array, wherein the third group does not includeemitters of the first group or emitters of the second group.
 24. Theoptical device of claim 23, wherein the third metal layer connects thethird group to a third anode.
 25. The optical device of claim 23,wherein the electrical isolation layer is a first electrical isolationlayer and the vias are first vias; and wherein the optical devicefurther comprises: a second electrical isolation layer between thesecond metal layer and the third metal layer, the second electricalisolation layer including second vias for electrically connectingportions of the second metal layer and portions of the third metallayer.
 26. The optical device of claim 25, wherein the second electricalisolation layer is not formed on the third group of emitters.
 27. Theoptical device of claim 25, wherein the first group of emitters areconnected to an anode through the first vias and the second vias. 28.The optical device of claim 25, wherein the second group of emitters areconnected to an anode through the first vias and the second vias. 29.The optical device of claim 25, wherein the third group of emitters areconnected to an anode through the first vias and the second vias. 30.The optical device of claim 21, further comprising: a backside layer ofthe array comprising an anti-reflective coating over each emission area.31. An emitter array, comprising: an emitter array including a set ofemitters, wherein each of the set of emitters has a respective emissionarea; a first metal layer, wherein the first metal layer substantiallycovers the emitter array, wherein the first metal layer includesopenings for each emission area, and wherein the first metal layer isconnected to first emitters of the set of emitters; a second metallayer, wherein the second metal layer substantially covers the firstmetal layer, and wherein the second metal layer is connected to secondemitters of the set of emitters, wherein the second emitters do notinclude the first emitters; and an electrical isolation layer, whereinthe electrical isolation layer is between the first metal layer and thesecond metal layer, and wherein the electrical isolation layer includesvias for electrically connecting a portion of the first metal layer andportion of the second metal layer.
 32. The emitter array of claim 31,wherein the first metal layer connects the first emitters to a firstanode and the second metal layer connects the second emitters to asecond anode.
 33. The emitter array of claim 31, wherein the first metallayer is not present over contact layers of the second emitters.
 34. Theemitter array of claim 33, wherein the second metal layer contacts thecontact layers of the second emitters.
 35. The emitter array of claim31, further comprising: a third metal layer that substantially coversthe second metal layer, the third metal layer being connected to a thirdemitters of the set of emitters, wherein the third emitters do notinclude the first emitters or the second emitters.
 36. The emitter arrayof claim 35, wherein the first metal layer and the second metal layerare not present over contact layers of the third emitters.
 37. Theemitter array of claim 36, wherein the third metal layer contacts thecontact layers of the third emitters.
 38. A vertical-cavitysurface-emitting laser (VCSEL), comprising: a first metal layer thatincludes an opening for an emission area of the VCSEL, the first metallayer being connected to first emitters; a second metal layer thatsubstantially covers the first metal layer, the second metal layer beingconnected to second emitters, wherein the second emitters does notinclude the first emitters; and an electrical isolation layer betweenthe first metal layer and the second metal layer, the electricalisolation layer either: including a via for electrically connecting aportion of the first metal layer and a portion of the second metallayer, or isolating the portion of the first metal layer from theportion of the second metal layer.
 39. The VCSEL of claim 38, furthercomprising: a third metal layer that substantially covers the secondmetal layer, the third metal layer being connected to third emitters,wherein the third emitters do not include the first emitters or thesecond emitters.
 40. The VCSEL of claim 39, wherein the electricalisolation layer is a first electrical isolation layer and the via is afirst via and wherein the VCSEL further comprises: a second electricalisolation layer between the second metal layer and the third metallayer, the second electrical isolation layer including a second via forelectrically connecting a portion of the second metal layer and aportion of the third metal layer.